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Universal Excess Noise in Resonant Tunneling via Strongly Localized States
in Physical Review B, 53 (23)
Voir la revue «Physical Review B»
We show that in disordered resonant tunneling conductors the excess current noise is suppressed by a factor of 3/4 in comparison with its Poisson value provided the electrons tunnel via strongly localized states. Thus we reveal a class of systems exhibiting universality of its shot-noise properties. We discuss recent experiments.